Journal Publications
56. A. R. Ellis, D. A. Duffy, I. P. Marko, S. Acharya, W. Du, S. Q-. Yu & S. J. Sweeney Challenges for room temperature operation of electrically pumped GeSn lasers. Sci Rep 14, 10318 (2024). https://doi.org/10.1038/s41598-024-60686-3
55. Grey Abernathy, Solomon Ojo, Hryhorii Stanchu, Yiyin Zhou, Oluwatobi Olorunsola, Joshua Grant, Wei Du, Yue-Tong Jheng, Guo-En Chang, Baohua Li, and Shui-Qing Yu, “Investigation of the cap layer for improved GeSn multiple quantum well laser performance,” Opt. Lett. 48, 1626-1629 (2023).
54. Oluwatobi Olorunsola, Abdulla Said, Solomon Ojo, Hryhorii Stanchu, Grey Abernathy, Sylvester Amoah, Samir Saha, Emmanuel Wangila, Joshua Grant, Sudip Acharya, Yue-Tong Jheng, Guo-En Chang, Baohua Li, Gregory Salamo, Shui-Qing Yu, Wei Du, “Study of SiGeSn-based multiple quantum well laser for photonics integrated circuits,” Proc. SPIE 12426, Silicon Photonics XVIII, 124260B (13 March 2023); https://doi.org/10.1117/12.2655510
53. M. K. Shah, R. A. Soref, W. Du, G. J. Salamo, S. Yu, and M. Mortazavi, “Low-Loss GaAs/AlGaAs-On-Sapphire Waveguides for Sapphire Based Photonic Integrated Circuits,” in CLEO 2023, Technical Digest Series (Optica Publishing Group, 2023), paper AM4M.4.
52. Oluwatobi Olorunsola, Abdulla Said, Solomon Ojo, Grey Abernathy, Samir Saha, Emmanuel Wangila, Joshua Grant, Hryhorii Stanchu, Sudip Acharya, Wei Du, Yue-Tong Jheng, Guo-En Chang, Baohua Li, Gregory Salamo, and Shui-Qing Yu, “Enhanced carrier collection efficiency of GeSn single quantum well towards all-group-IV photonics applications“, Applied Physics Letter, 2022.
51. Yiyin Zhou, Solomon Ojo, Chen-Wei Wu, Yuanhao Miao, Huong Tran, Joshua M. Grant, Grey Abernathy, Sylvester Amoah, Jake Bass, Gregory Salamo, Wei Du, Guo-En Chang, Jifeng Liu, Joe Margetis, John Tolle, Yong-Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, and Shui-Qing Yu, “Electrically injected GeSn lasers with peak wavelength up to 2.7 μm“, Photon. Res. 10, 222-229 (2022). Highlighted on the journal cover page.
50. Oluwatobi Olorunsola, Solomon Ojo,Grey Abernathy, Yiyin Zhou, Sylvester Amoah, P.C. Grant, Wei Dou, Joe Margetis, John Tolle, Andrian Kuchuk, Wei Du, Baohua Li, Yong-Hang Zhang, and Shui-Qing Yu, “Investigation of SiGeSn/GeSn Single Quantum Well with Enhanced Well Emission“, Nanotechnology 33 085201 (2022).
49. Joshua Grant, Grey Abernathy, Oluwatobi Olorunsola, Solomon Ojo, Sylvester Amoah, Emmanuel Wanglia, Samir Sah, Abbas Sabbar, Wei Du, Murtadha Alher, Baohua Li, and Shui-Qing Yu, “Growth of pseudomorphic GeSn at low pressure with Sn composition up to 16.7 %“, Materials 2021, 14(24), 7637; https://doi.org/10.3390/ma14247637.
48. Jake Bass, Huong Tran, Wei Du, Richard Soref, and Shui-Qing Yu, “The impact of nonlinear effects in Si towards integrated microwave-photonic applications“, Optics Express 29 (19), 30844-30856.
47. Grey Abernathy, Yiyin Zhou, Solomon Ojo, Bader Alharthi, Perry C. Grant, Wei Du, Joe Margetis, John Tolle, Andrian Kuchuk, Baohua Li, and Shui-Qing Yu, “Study of SiGeSn/GeSn single quantum well towards high-performance all-group-IV optoelectronics“, Journal of Applied Physics 129 (9), 093105, arXiv:2009.12254 [physics.app-ph]
46. Yiyin Zhou, Yuanhao Miao, Solomon Ojo, Huong Tran, Grey Abernathy, Joshua M. Grant, Sylvester Amoah, Gregory Salamo, Wei Du, Jifeng Liu, Joe Margetis, John Tolle, Yong-Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, and Shui-Qing Yu, Electrically injected GeSn lasers on Si operating up to 100 K, Optica 7, 924-928 (2020), https://doi.org/10.1364/OPTICA.395687, https://arxiv.org/abs/2004.09402. This work was reported by many media world widely. Search article “Materials Science Reserchers Develop First Electrically Injected Laser” for the report. Selected media list is given in below:
45. Wei Du, Quang M. Thai, Jeremie Chrétien, Mathieu Bertrand, Lara Casiez, Yiyin Zhou, Joe Margetis, Nicolas Pauc, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, John Tolle, Baohua Li and Shui-Qing Yu, Study of Si-based GeSn optically pumped lasers with micro-disk and ridge waveguide structures, Front. Phys. 7:147., doi: 10.3389/fphy.2019.00147.
44. Samir K. Saha, Rahul Kumar, Andrian Kuchuk, Mohammad Z. Alavijeh, Yurii Maidaniuk, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo, Crystalline GaAs thin film growth on c-plane sapphire substrate, Cryst. Growth Des. 2019, 19, 5088−5096.
43. Huong Tran, Thach Pham, Joe Margetis, Yiyin Zhou, Wei Dou, Perry C. Grant, Joshua M. Grant, Sattar Alkabi, Wei Du, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu, Si-based GeSn photodetectors towards mid-infrared imaging applications, ACS Photonics 2019, DOI: 10.1021/acsphotonics.9b00845..
42. T. D. Eales, I. P. Marko, S. Schulz, E. O’Halloran, S. A. Ghetmiri, W. Du, Y. Zhou, S.Q. Yu, J. Margetis, J. Tolle, E. P. O’Reilly, and S. J. Sweeney, Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration, Scientific Reports (2019) 9:14077, https://doi.org/10.1038/s41598-019-50349-z.42. Perry C. Grant, Wei Dou, Bader Alharthi, Joshua M. Grant, Huong Tran, Grey Abernathy, Aboozar Mosleh, Wei Du, Baohua Li, Mansour Mortazavi, Hameed A. Naseem, Shui-Qing Yu, UHV-CVD Growth of High Quality GeSn Using SnCl4: From Growth Optimization to Prototype Devices, Optical Materials Express, Vol. 9, No. 8 pp 3277-3291(2019). https://doi.org/10.1364/OME.9.003277 Selected as the editor’s pick.
41. Yiyin Zhou, Wei Dou, Wei Du, Solomon Ojo, Huong Tran, Seyed A. Ghetmiri, Jifeng Liu, Greg Sun, Richard Soref, Joe Margetis, John Tolle, Baohua Li, Zhong Chen, Mansour Mortazavi, Shui-Qing Yu, Si-based GeSn lasers with ridge and planar waveguide structures and operating temperatures up to 270 K, ACS Photonics (2019), DOI: 10.1021/acsphotonics.9b00030. This work was highlighted by the following media (see the link in below).
https://phys.org/news/2019-06-semiconductor-laser-silicon.html
https://parallelstate.com/news/researchers-improve-semiconductor-laser-on-silicon/137969
https://nationnews.com.au/researchers-improve-semiconductor-laser-on-silicon/
https://macaway.com/how-researchers-improve-semiconductor-laser-on-silicon/
http://mikedyess.info/para/researchers-improve-semiconductor-laser-on-silicon/
https://spotonarkansas.com/ar-colleges/148495/researchers-improve-semiconductor-laser.html
40. S.V. Kondratenko, Yu. V. Hyrka, Yu. I. Mazur, A.V. Kuchuk, Wei Dou, Huong Tran, Joe Margetis, John Tolle, Wei Du, Shui-Qing Yu, and G. J. Salamo, Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-xSnx thin films on Ge/Si(001) substrate, Acta Materialia, Volume 171, 1 June 2019, Pages 40-47, https://doi.org/10.1016/j.actamat.2019.04.004.
39. Bader Alharthi, Wei Dou, Perry C. Grant, Joshua M. Grant, Timothy Morgan, Aboozar Mosleh, Wei Du, Baohua Li, Mansour Mortazavi, Hameed Naseem, and Shui-Qing Yu, Growth of High Quality Ge Buffer using Plasma Enhancement via UHV-CVD System for Photonic Devices Applications, Applied Surface Science (Available online 8 March 2019), https://doi.org/10.1016/j.apsusc.2019.03.062.
38. Joe Margetis, Yiyin Zhou, Wei Dou, Perry C. Grant, Wei Du, Bader Alharthi, Huong Tran, Solomon Ojo, Grey Abernathy, Seyed A. Ghetmiri, Jifeng Liu, Greg Sun, Richard Soref, John Tolle, Baohua Li, Mansour Mortazavi, Shui-Qing Yu, All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K, Appl. Phys. Lett. 113, 221104 (2018); https://doi.org/10.1063/1.5052563.
37. Wei Dou, Bader Alharthi, Perry C. Grant, Joshua M. Grant, Aboozar Mosleh, Huong Tran, Wei Du, Mansour Mortazavi, Baohua Li, Hameed Naseem, and Shui-Qing Yu, “Crystalline GeSn growth by plasma enhanced chemical vapor deposition,” Opt. Mater. Express 8, 3220-3229 (2018). Selected as the editor’s pick.
36. Perry C Grant, Joe Margetis, Wei Du, Yiyin Zhou, Wei Dou, Grey Abernathy, Andrian Kuchuk, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A Soref, Mansour Mortazavi and Shui-Qing Yu, “Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement” Nanotechnology 29, 4652 (2018)
35. Wei Dou, Yiyin Zhou, Joe Margetis, Seyed Amir Ghetmiri, Sattar Al-Kabi, Wei Du, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu, “Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3%,” Opt. Lett. 43, 4558-4561 (2018)
34. Perry C. Grant, Joe Margetis, Yiyin Zhou, Wei Dou, Grey Abernathy, Wei Du, Baohua Li, John Tolle, Jifeng Liu, Greg Sun, Richard A. Soref, Mansour Mortazavi, Shui-Qing Yu, Direct Bandgap Type-I GeSn/GeSn Quantum Well on Si substrate, AIP Advances 8, 025104 (2018), Selected as the editor’s pick.
33. Huong Tran, Thach Pham, Wei Du, Yang Zhang, Perry C. Grant, Josh M. Grant, Greg sun, Richard A. Soref, Joe Margetis, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu, High performance Ge0.89Sn0.11 photodiode for low-cost shortwave infrared imaging, Journal of Applied Physics 124, 013101 (2018); doi: 10.1063/1.5020510.
32. Bader Alharthi, Joshua M. Grant, Wei Dou, Perry C. Grant, Aboozar Mosleh, Wei Du, Mansour Mortazavi, Baohua Li, Hameed Naseem, and Shui-Qing Yu, Heteroepitaxial Germanium-on-Silicon Using RF Plasma Enhancement for Ultra-High Vacuum Chemical Vapor Deposition, Journal of Electronic Materials (2018), doi.org/10.1007/s11664-018-6315-5.
31. Hakimah Alahmad, Aboozar Mosleh, Murtadha Alher, Seyedeh Fahimeh Banihashemian, Seyed Amir Ghetmiri, Sattar Al-Kabi, Wei Du, Baohua Li, Shui-Qing Yu, Hameed A. Naseem, Growth and characterization of GePb Alloy using layer inversion method, Journal of Electronic Materials 47 (7), 3733-3740.
30. Wei Dou, Mourad Benamara, Aboozar Mosleh, Joe Margetis, Perry Grant, Yiyin Zhou, Sattar Al-Kabi, Wei Du, John Tolle, Baohua Li, Mansour Mortazavi, Shui-Qing Yu, Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth, Scientific Reports (Nature Publisher Group) vol. 8, pp. 1-11, 2018.
29. Joe Margetis, Sattar Al-Kabi, Wei Du, Wei Dou, Yiyin Zhou, Thach Pham, Perry Grant, Seyed Ghetmiri, Aboozar Mosleh, Baohua Li, Jifeng Liu, Greg Sun, Richard Soref, John Tolle, Mansour Mortazavi, Shui-Qing Yu, Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K, ACS Photonics, ACS Photonics, 2018, 5 (3), pp 827–833, DOI: 10.1021/acsphotonics.7b00938, arXiv:1708.05927. This work was highlighted by the following media (see the link in below).
https://phys.org/news/2018-02-pptically-laser-closer-sensors.html
http://www.physnews.com/nano-physics-news/cluster1768865394/
http://www.newswise.com/articles/view/689280/?sc=rssn
https://www.azooptics.com/News.aspx?newsID=2370
28. Perry C. Grant, Wei Dou, Bader Alharthi, Joshua M. Grant, Aboozar Mosleh, Wei Du, Baohua Li, Mansour Mortazavi, Hameed A. Naseem, and Shui-Qing Yu, Comparison study of the low temperature growth of dilute GeSn and Ge, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35, 061204 (2017); doi: 10.1116/1.4990773.
27. Joe Margetis, Nupur Bhargava, Wei Du, Shui-Qing Yu, Baohua Li, and John Tolle, Strain Engineering in Epitaxial GexSn1-x: a Path to Low-defect high Sn-content Layers, Semiconductor Science and Technology, In press. https://doi.org/10.1088/1361-6641/aa7fc7
26. Bader Alharthi, Joe Margetis, Huong Tran, Sattar Al-kabi, Wei Dou, Seyed Amir Ghetmiri, Aboozar Mosleh, John Tolle, Wei Du, Mansour Mortazavi, Baohua Li, Hameed Naseem, and Shui-Qing Yu, Study of material and optical properties of SixGe1-x-y Sny alloys for Si-based optoelectronic device applications, Optical Materials Express, Vol. 7, Issue 10, pp. 3517-3528 (2017).
25. Wei Du, Seyed Amir Ghetmiri, Joe Margetis, Sattar Al-Kabi, Yiyin Zhou, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Mansour Mortazavi, and Shui-Qing Yu, Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure, Journal of Applied Physics 122, 123102 (2017); doi: 10.1063/1.4986341.
24. J. Margetis, A. Mosleh, S. Al-Kabi, S. Ghetmiri, W. Du, W. Dou, M. Benamara, B. Li, M. Mortazavi, H. Naseem, S.-Q. Yu and J. Tolle, Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD for mid-infrared applications, Journal of Crystal Growth, 463 (2017) 128–133.
23. Seyed A. Ghetmiri, Yiyin Zhou, Joe Margetis, Sattar Al-Kabi, Wei Dou, Aboozar Mosleh, Wei Du, Andrian Kuchuk, Jifeng Liu, Greg Sun, Richard A. Soref, John Tolle, Hameed A. Naseem, Baohua LI, Mansour Mortazavi, and Shui-Qing Yu, Study of SiGeSn/GeSn/SiGeSn structure towards direct bandgap type-I quantum well for all group-IV-optoelectronics, Optics Letters, Vol. 42, No. 3 (2017), pp 387- 390.
22. Sattar Al-Kabi, Seyed Ghetmiri, Joe Margetis, Thach Pham, Yiyin Zhou, Bria Collier, Randy Quinde, Wei Du, Aboozar Mosleh, Jifeng Liu, Greg Sun, Richard Soref, John Tolle, Baohua Li, Mansour Mortazavi, Hameed Naseem, and Shui-Qing Yu, An optically pumped 2.5 µm GeSn laser on Si operating at 110 K, Applied Physics Letters 109, 171105 (2016); doi: 10.1063/1.4966141. This work was highlighted by the following media (see the link in below).
https://www.sciencedaily.com/releases/2017/02/170207110239.htm
http://esciencenews.com/sources/newswise.scinews/2017/02/07/germanium.tin.laser.could.increase.processing.speed.computer.chips
http://www.hitechdays.com/news/166494/germanium-tin-laser-could-increase-processing-speed-of-computer-chips/
http://www.novuslight.com/silicon-photonics-germanium-tin-laser-promises-faster-chips_N6609.html
21. Sattar Al-Kabi, Seyed Ghetmiri, Joe Margetis, Wei Du, Aboozar Mosleh, Wei Dou, Greg Sun, Richard Soref, John Tolle, Baohua Li, Mansour Mortazavi, Hameed Naseem, Shui-Qing Yu, Study of High Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications, Journal of Electronic Materials (2016), 10.1007/s11664-016-5028-x.
20. Wei Dou, Seyed Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh, Yiyin Zhou, Bader Alharthi, Wei Du, Joe Margetis, John Tolle, Andrian Kuchuk, Mourad Benamara, Baohua Li, Hameed Naseem, Mansour Mortazavi, and Shui-Qing Yu, Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications, Journal of Electronic Materials (2016), 10.1007/s11664-016-5031-2.
19. W. Du, S. Al-Kabi, S. Ghetmiri, H. Tran, T. Pham, B. Alharthi, A. Mosleh, J. Margetis, J. Tolle, H. Naseem, M. Mortazavi, G. Sun, R. Soref, B. Li, and S. -Q. Yu, Development of SiGeSn Technique towards Mid-Infrared Devices in Silicon Photonics, ECS Transactions, 75 (8) 231-239 (2016).
18. Yiyin Zhou, Wei Dou, Wei Du, Thach Pham, Seyed Amir Ghetmiri, Sattar Al-Kabi, Aboozar Mosleh, Joe Margetis, John Tolle, Greg Sun, Richard Soref, Baohua Li, Mansour Mortazavi, Hameed Naseem, and Shui-Qing Yu, Systematic study of Si-based GeSn light-emitting diodes towards mid-infrared applications, Journal of Applied Physics 120, 023102 (2016)
17. A. Mosleh, M. Alher, L. C. Cousar, W. Du, S. A. Ghetmiri, S. Al-Kabi, W. Dou, P. C. Grant, G. Sun, R. A. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, Buffer-free GeSn and SiGeSn growth on Si substrate using in-situ SnD4 gas mixing, J. Electron. Mater., April 2016, Volume 45, Issue 4, pp 2051-2058.
16. T. Pham, W. Du, H. Tran, J. Margetis, J. Tolle, G. Sun, R. A. Soref, H. A. Naseem, B. Li, and S.-Q. Yu, Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection, Opt. Express, Vol. 24, Issue 5, pp. 4519-4531 (2016), doi: 10.1364/OE.24.004519.
15. Huong Tran, Wei Du, Seyed A. Ghetmiri, Aboozar Mosleh, Greg Sun, Richard A. Soref, Joe Margetis, John Tolle, Baohua Li, Hameed A. Naseem, and Shui-Qing Yu, Systematic Study of Ge1-xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics, Journal of Applied Physics 119, 103106 (2016); doi: 10.1063/1.4943652
14. A. Mosleh, M. Alher, W. Du, L. C. Cousar, S. A. Ghetmiri, S. Al-Kabi, W. Dou, P. C. Grant, G. Sun, R. A. Soref, B. Li, H. A. Naseem, and S.-Q. Yu, SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system, J. Vac. Sci. Technol. B, 34, 011201 (2016). Selected as the editor’s pick and the most read paper in the month.
13. A. Mosleh, M. Alher, L. Cousar, H. Abu-safe, W. Dou, P. C. Grant, S. Al- Kabi, S. A. Ghetmiri, B. Alharthi, H. Tran, W. Du, M. Benamara, B. Li, M. Mortazavi, S.-Q. Yu, and H. Naseem, Enhancement of Material Quality of (Si)GeSn Films Grown By SnCl4 Precursor, ECS Transactions, 69 (5) 279-286 (2015).
12. M. Alher, A. Mosleh, L. Cousar, W. Dou, P. C. Grant, S. A. Ghetmiri, S. Al-Kabi, W. Du, M. Benamara, B. Li, M. Mortazavi, S.-Q. Yu, and H. A. Naseem, CMOS Compatible Growth of High-Quality Ge, SiGe and SiGeSn for Photonic Device Applications, ECS Transactions, 69 (5) 269-278 (2015).
11. S. Al-Kabi, S. A. Ghetmiri, J. Margetis, W. Du, A.r Mosleh, M. Alher, W. Dou, G. Sun, R. A. Soref, J. Tolle, B. Li, M. Mortazavi, H. A. Naseem, and S.-Q. Yu, Optical characterization of Si-based Ge1-xSnx alloys with Sn compositions up to 12%, J. Electron. Mater., 1-9, DOI: 10.1007/s11664-015-4283-6 (2015). Selected as editor’s pick.
10. T. N. Pham, W. Du, B. R. Conley, J. Margetis, G. Sun, R. A. Soref, J. Tolle, B. Li and S. -Q. Yu, Si-based Ge0.9Sn0.1 photodetector with a peak responsivity of 2.85 A/W and a longwave cutoff at 2.4 μm, Electronics Letters, 51, 854 (2015).
9. Aboozar Mosleh, Murtadha Alher, Larry C. Cousar, Wei Du, Seyed Amir Ghetmiri, Tach Pham, Benjamin R. Conley, Joshua M. Grant, Greg Sun, Richard A. Soref, Baohua Li, Hameed. A. Naseem, and Shui-Qing Yu, Direct growth of Ge1-xSnx films on Si using a cold-wall ultra-high-vacuum chemical-vapor-deposition system, Frontiers in Materials, vol. 2, pp. 30 (2015). Highlighted by the editor.
8. Benjamin R. Conley, Joe Margetis, Wei Du, Huong Tran, Aboozar Mosleh, Seyed Amir Ghetmiri, John Tolle, Greg Sun, Richard Soref, Baohua Li, Hameed A. Naseem, and Shui-Qing Yu, Si based GeSn photoconductors with a 1.63A/W peak responsivity and a 2.4μm longwavelength cutoff, Applied Physics Letters, 105, 221117 (2014).
7. Joe Margetis, Seyed Amir Ghetmiri, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Richard A. Soref, Greg Sun, Lucas Domulevicz, Hameed A. Naseem, Shui-Qing Yu, and John Tolle, Growth and characterization of Ge1-xSnx alloys deposited using a commercial CVD system, ECS Transactions, 64 (6) 711-720 (2014).
6. A. Mosleh, M. Benamara, S.A. Ghetmiri, B. Conley, W. Du, J. Tolle, S.-Q. Yu, H. Naseem, Investigation of defect formation and propagation in GeSn thin films, ECS Transactions, 64 (6) 895-901 (2014).
5. Seyed Amir Ghetmiri, Wei Du, Joe Margetis, Aboozar Mosleh, Larry Cousar, Benjamin R. Conley, Lucas Domulevicz, Amjad Nazzal, Greg Sun, Richard A. Soref, John Tolle, Baohua Li, Hameed A. Naseem, and Shui-Qing Yu, Direct-bandgap GeSn grown on Silicon with 2230 nm photoluminescence, Appl. Phys. Lett., Vol. 105, Issue 15, pp. 151109 (2014).
4. Seyed Amir Ghetmiri, Wei Du, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Richard A. Soref, Greg Sun, Joe Margetis, John Tolle, Hameed A. Naseem, and Shui-Qing Yu, Near and mid-infrared photoluminescence from Ge1-xSnx thin films on Si substrates, JVST B, 32, 060601 (2014). This paper was selected as the Featured Letters by JVST B on 12/16/2014.
3. Wei Du, Seyed A. Ghetmiri, Benjamin R. Conley, Aboozar Mosleh, Amjad Nazzal, Richard A. Soref, Greg Sun, John Tolle, Joe Margetis, Hameed A. Naseem, and Shui-Qing Yu, Competition of optical transitions between direct and indirect bandgaps in Ge1-xSnx, Appl. Phys. Lett., vol. 105, pp. 051104 (2014), Highlighted for the latest research in thin film by AIP, http://aip-info.org/1XPS-2OZ9V-64C9M6MI78/cr.aspx
2. Wei Du, Yiyin Zhou, Seyed A. Ghetmiri, Aboozar Mosleh, Benjamin R. Conley, Amjad Nazzal, Richard A. Soref, Greg Sun, John Tolle, Joe Margetis, Hameed A. Naseem, and Shui-Qing Yu, Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge double heterostructure LEDs on Si substrates via CVD, Appl. Phys. Lett., vol. 104, pp. 241110 (2014)
1. Benjamin R. Conley, Aboozar Mosleh, Seyed Amir Ghetmiri, Wei Du, Richard A. Soref, Greg Sun, Joe Margetis, John Tolle, Hameed A. Naseem, and Shui-Qing Yu, Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection, Opt. Express Vol. 22, No. 13, pp. 15639-15652 (2014). This work was highlighted by the following media (see the link in below).
http://www.pddnet.com/news/2014/09/germanium-tin-cheaper-smartphones
http://phys.org/news/2014-09-germanium-tin-cheaper-infrared-cameras.html
http://www.azom.com/news.aspx?newsID=42434
http://www.sciencedaily.com/releases/2014/09/140918121338.htm